ELECTRONIC COMPONENT CATALOGUE
IRF130
IR
IRF130
Package: CAN2
IRF130 is a high-reliability 100 V N-channel HEXFET MOSFET rated for 14 A at 25°C in a TO-204AA (TO-3) package.
Technical Parameters
| Device type | High-reliability N-channel power MOSFET |
|---|---|
| Technology | HEXFET MOSFET |
| Drain-source breakdown voltage | 100 V minimum |
| Continuous drain current | 14 A at 25°C case; 9 A at 100°C case |
| Pulsed drain current | 56 A |
| On-state resistance | 0.18 Ω maximum at VGS = 10 V, ID = 8 A |
| Gate-source voltage | ±20 V maximum |
| Operating junction and storage temperature | -55°C to +150°C |
| Package | TO-204AA (TO-3) |
| Technical source | Infineon IRF130 official product page and IRF120/IRF130 family data sheet |
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